Tin Deposition and Tin Cleaning for EUVL

Extreme ultraviolet lithography (EUVL) is one of the cutting-edge leading technologies in a semiconductor industries. For tin Cross Section Measurements, the mean free path of an ion as it travels through the EUV source is dependent on the cross section. For tin Diffusion Coefficient Measurements, tin vapor, generated as ions neutralize, diffuses throughout the system. Deposition rate depends on tin flux. Tin can be cleaned by H2 etching, forming SnH4 vapor. SnH4 sticking coefficients for other EUV relevant surfaces need to be measured. Tin exposed to H radicals can become brittle and eject solid particles (tin spitting). Size, velocity, and rate of particle ejection need to be characterized to ensure they will not damage other EUV components.